IXTH15N70 View Datasheet(PDF) - InterFET
Part Name
Description
Manufacturer
IXTH15N70 Datasheet PDF : 2 Pages
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IXTH 15N70
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
t
d(off)
tf
Qg(on)
Qgs
Qgd
R
thJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 ID25, pulse test
11 18
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
4500
pF
420
pF
140
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
R
G
=
2
Ω,
(External)
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
20 40 ns
43 60 ns
70 90 ns
40 60 ns
150 170 nC
29 40 nC
60 85 nC
0.42 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
15 A
60 A
1.5 V
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
600
ns
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A
2.2 2.6
2
b
1.0 1.4
b1 1.65 2.13
b 2.87 3.12
2
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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