IXTX200N10L2 View Datasheet(PDF) - IXYS CORPORATION

Part Name

Description

Manufacturer

IXTX200N10L2

Linear L2™ Power MOSFET w/ Extended FBSOA

IXYS CORPORATION 

Advance Technical Information

Linear L2TM Power

MOSFET w/ Extended

FBSOA

IXTK200N10L2

IXTX200N10L2

VDSS

ID25

RDS(on)

= 100V

= 200A

< 11mΩ

N-Channel Enhancement Mode

Guaranteed FBSOA

Avalanche Rated

TO-264 (IXTK)

Symbol

VDSS

VDGR

VGSS

VGSM

ID25

ILRMS

IDM

IA

EAS

PD

TJ

TJM

Tstg

TL

TSOLD

Md

FC

Weight

Test Conditions

TJ = 25°C to 150°C

TJ = 25°C to 150°C, RGS = 1MΩ

Continuous

Transient

TC = 25°C (Chip Capability)

Lead Current Limit, (RMS)

TC = 25°C, Pulse Width Limited by TJM

TC = 25°C

TC = 25°C

TC = 25°C

1.6mm (0.063 in.) from Case for 10s

Plastic Body for 10s

Mounting Torque (IXTK)

Mounting Force (IXTX)

TO-264

PLUS247

Maximum Ratings

100

V

100

V

±20

V

±30

V

200

A

160

A

500

A

100

A

5

J

1040

W

-55...+150

°C

150

°C

-55...+150

°C

300

°C

260

°C

1.13/10

20..120 / 4.5..27

Nm/lb.in.

N/lb.

10

g

6

g

Symbol

Test Conditions

(TJ = 25°C, Unless Otherwise Specified)

BVDSS

VGS = 0V, ID = 1mA

VGS(th)

VDS = VGS, ID = 3mA

IGSS

VGS = ±20V, VDS = 0V

IDSS

VDS = VDSS, VGS = 0V

TJ = 125°C

RDS(on)

VGS = 10V, ID = 0.5 • ID25, Note 1

Characteristic Values

Min. Typ. Max.

100

V

2.0

4.5 V

±200 nA

10 μA

250 μA

11 mΩ

G

D

S

Tab

PLUS247(IXTX)

G

D

S

Tab

G = Gate

D = Drain

S = Source Tab = Drain

Features

z Designed for Linear Operation

z Avalanche Rated

z Guaranteed FBSOA at 75°C

Advantages

z Easy to Mount

z Space Savings

z High Power Density

Applications

z Solid State Circuit Breakers

z Soft Start Controls

z Linear Amplifiers

z Programmable Loads

z Current Regulators

© 2010 IXYS CORPORATION, All Rights Reserved

DS100239(2/10)

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