K4B1G0446C View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

K4B1G0446C

1Gb C-die DDR3 SDRAM Specification

Samsung 

K4B1G04(08/16)46C

1Gb DDR3 SDRAM

9.0 AC and DC Output Measurement Levels

9.1 Single Ended AC and DC Output Levels

[ Table 14 ] Single Ended AC and DC output levels

Symbol Parameter

VOH(DC)

VOM(DC)

VOL(DC)

VOH(AC)

VOL(AC)

DC output high measurement level (for IV curve linearity)

DC output mid measurement level (for IV curve linearity)

DC output low measurement level (for IV curve linearity)

AC output high measurement level (for output SR)

AC output low measurement level (for output SR)

DDR3-800/1066/1333/1600

0.8 x VDDQ

0.5 x VDDQ

0.2 x VDDQ

VTT + 0.1 x VDDQ

VTT - 0.1 x VDDQ

Units

V

V

V

V

V

Notes

1

1

Note :

1. The swing of +/-0.1xVDDQ is based on approximately 50% of the static single ended output high or low swing with a driver impedance of 34ohms and

an effective test load of 25ohms to VTT=VDDQ/2.

9.2 Differential AC and DC Output Levels

Symbol Parameter

VOHdiff(AC) AC differential output high measurement level (for output SR)

VOLdiff(DC) AC differential output low measurement level (for output SR)

[ Table 15 ] Differential AC and DC output levels

DDR3-800/1066/1333/1600

+0.2 x VDDQ

-0.2 x VDDQ

Units

V

V

Notes

1

1

Note :

1. The swing of +/-0.2xVDDQ is based on approximately 50% of the static singel ended output high or low swing with a driver impedance of 34ohms and

an effective test load of 25ohms to VTT=VDDQ/2 at each of the differential outputs

Page 20 of 63

Rev. 1.0 June 2007

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