K4B2G0446D-HYF8 View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

K4B2G0446D-HYF8

2Gb D-die DDR3L SDRAM 1.35V 78FBGA with Lead-Free & Halogen-Free (RoHS compliant)

Samsung 

K4B2G0446D

K4B2G0846D

datasheet

[ Table 10 ] Allowed time before ringback (tDVAC) for CK - CK and DQS - DQS (1.35V)

Slew Rate [V/ns]

tDVAC [ps] @ |VIH/Ldiff(AC)| = 320mV

min

max

> 4.0

TBD

-

4.0

TBD

-

3.0

TBD

-

2.0

TBD

-

1.8

TBD

-

1.6

TBD

-

1.4

TBD

-

1.2

TBD

-

1.0

TBD

-

< 1.0

TBD

-

[ Table 11 ] Allowed time before ringback (tDVAC) for CK - CK and DQS - DQS (1.5V)

Slew Rate [V/ns]

tDVAC [ps] @ |VIH/Ldiff(AC)| = 350mV

min

max

> 4.0

75

-

4.0

57

-

3.0

50

-

2.0

38

-

1.8

34

-

1.6

29

-

1.4

22

-

1.2

13

-

1.0

0

-

< 1.0

0

-

Rev. 1.01

DDR3L SDRAM

tDVAC [ps] @ |VIH/Ldiff(AC)| = 270mV

min

max

TBD

-

TBD

-

TBD

-

TBD

-

TBD

-

TBD

-

TBD

-

TBD

-

TBD

-

TBD

-

tDVAC [ps] @ |VIH/Ldiff(AC)| = 300mV

min

max

175

-

170

-

167

-

163

-

162

-

161

-

159

-

155

-

150

-

150

-

- 16 -

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