K4B2G1646C-HCMA View Datasheet(PDF) - Samsung
Part Name
Description
Manufacturer
K4B2G1646C-HCMA Datasheet PDF : 64 Pages
| |||
K4B2G1646C
datasheet
Rev. 1.11
DDR3 SDRAM
9.7.1 Output Drive Temperature and Voltage Sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to Table 23 and Table 24.
∆T = T - T(@calibration); ∆V = VDDQ - VDDQ (@calibration); VDD = VDDQ
*dRONdT and dRONdV are not subject to production test but are verified by design and characterization
[ Table 23 ] Output Driver Sensitivity Definition
Min
RONPU@VOHDC
0.6 - dRONdTH * |∆T| - dRONdVH * |∆V|
RON@VOMDC
RONPD@VOLDC
0.9 - dRONdTM * |∆T| - dRONdVM * |∆V|
0.6 - dRONdTL * |∆T| - dRONdVL * |∆V|
Max
1.1 + dRONdTH * |∆T| + dRONdVH * |∆V|
1.1 + dRONdTM * |∆T| + dRONdVM * |∆V|
1.1 + dRONdTL * |∆T| + dRONdVL * |∆V|
[ Table 24 ] Output Driver Voltage and Temperature Sensitivity
Speed Bin
DDR3-800/1066/1333
Min
Max
dRONdTM
dRONdVM
dRONdTL
dRONdVL
dRONdTH
dRONdVH
0
1.5
0
0.15
0
1.5
0
0.15
0
1.5
0
0.15
DDR3-1600/1866/2133
Min
Max
0
1.5
0
0.13
0
1.5
0
0.13
0
1.5
0
0.13
Units
RZQ/7
RZQ/7
RZQ/7
Units
%/°C
%/mV
%/°C
%/mV
%/°C
%/mV
9.8 On-Die Termination (ODT) Levels and I-V Characteristics
On-Die Termination effective resistance RTT is defined by bits A9, A6 and A2 of MR1 register.
ODT is applied to the DQ,DM, DQS/DQS and TDQS,TDQS (x8 devices only) pins.
A functional representation of the on-die termination is shown below. The individual pull-up and pull-down resistors (RTTpu and RTTpd) are defined as
follows :
RTTpu =
RTTpd =
VDDQ-VOUT
l Iout l
VOUT
l Iout l
under the condition that RTTpd is turned off
under the condition that RTTpu is turned off
To
other
circuitry
like
RCV,
...
Chip in Termination Mode
ODT
VDDQ
Ipu
RTTPu
RTTPd
Ipd
Iout=Ipd-Ipu
DQ
Iout
VOUT
VSSQ
Figure 12. On-Die Termination : Definition of Voltages and Currents
- 20 -
Share Link: 