K4S641632H-TC70 View Datasheet(PDF) - Samsung
Part Name
Description
Manufacturer
K4S641632H-TC70 Datasheet PDF : 14 Pages
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SDRAM 64Mb H-die (x4, x8, x16)
DC CHARACTERISTICS (x4, x8)
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C for x4, x8)
Parameter
Symbol
Test Condition
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
ICC2P CKE ≤ VIL(max), tCC = 10ns
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Operating current
(Burst mode)
Refresh current
IO = 0 mA
ICC4
Page burst
4Banks Activated
tCCD = 2CLKs
ICC5 tRC ≥ tRC(min)
C
Self refresh current
ICC6 CKE ≤ 0.2V
L
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S6404(08)32H-TC
4. K4S6404(08)32H-TL
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
CMOS SDRAM
Version
75
75
1
1
15
6
3
3
30
25
115
135
1
400
Unit
Note
mA
1
mA
mA
mA
mA
mA
1
mA
2
mA
3
uA
4
Rev. 1.8 August 2004
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