K4T1G044QQ View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

K4T1G044QQ

1Gb Q-die DDR2 SDRAM

Samsung 

K4T1G044QQ

K4T1G084QQ

K4T1G164QQ

DDR2 SDRAM

DQS

DQS

VDDQ

tDS tDH

VIH(ac) min

VIH(dc) min

dc to VREF

region

VREF(dc)

VIL(dc) max

dc to VREF

region

tangent

line

VIL(ac) max

tDS tDH

nominal

line

tangent

line

nominal

line

VSS

∆TR

∆TF

HRoisldinSgleSwignRaalte=

tangent line [ VREF(dc) - Vil(dc)max ]

∆TR

HFoalldlinSgleSwigRnaalte=

tangent line [ Vih(dc)min - VREF(dc) ]

∆TF

Figure 11 - IIIustration of tangent line for tDH (differential DQS, DQS)

31 of 44

Rev. 1.01 November 2007

Share Link: