K4T1G084QF-BCF7 View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

K4T1G084QF-BCF7

1Gb F-die DDR2 SDRAM

Samsung 

K4T1G044QF

K4T1G084QF

K4T1G164QF

datasheet

Rev. 1.11

DDR2 SDRAM

9. OCD default characteristics

Description

Parameter

Output impedance

Output impedance step size for OCD calibration

Pull-up and pull-down mismatch

Output slew rate

Sout

Min

Nom

Max

18ohm at norminal condition

See full strength default driver characteristics

on device operation specification

0

1.5

0

4

1.5

5

Unit

ohm

ohm

ohm

V/ns

NOTE

1,2

6

1,2,3

1,4,5,6,7,8

NOTE :

1. Absolute Specifications (0°C ≤ TCASE ≤ +95°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)

2. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV; (VOUT-VDDQ)/Ioh must be less than 23.4 ohms for values of VOUT

between VDDQ and VDDQ- 280mV. Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV; VOUT/Iol must be less than 23.4 ohms for

values of VOUT between 0V and 280mV.

3. Mismatch is absolute value between pull-up and pull-down, both are measured at same temperature and voltage.

4. Slew rate measured from VIL(AC) to VIH(AC).

5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is

guaranteed by design and characterization.

6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process and represents only the DRAM uncertainty.

Output slew rate load :

VTT

Output

(VOUT)

25 ohm

Reference

Point

7. DRAM output slew rate specification applies to 667Mb/sec/pin and 800Mb/sec/pin speed bins.

8. Timing skew due to DRAM output slew rate mismatch between DQS / DQS and associated DQ is included in tDQSQ and tQHS specification.

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