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Part Name
Description
K4T1G084QF-BCE6000 View Datasheet(PDF) - Samsung
Part Name
Description
Manufacturer
K4T1G084QF-BCE6000
1Gb F-die DDR2 SDRAM
Samsung
K4T1G084QF-BCE6000 Datasheet PDF : 46 Pages
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K4T1G044QF
K4T1G084QF
K4T1G164QF
datasheet
Rev. 1.11
DDR2 SDRAM
DQS
Note1
V
DDQ
V
IH
(AC)min
V
IH
(DC)min
V
REF
(DC)
V
IL
(DC)max
V
IL
(AC)max
V
SS
V
DDQ
V
IH
(AC)min
V
REF
to ac
region
V
IH
(DC)min
V
REF
(DC)
tDS tDH
nominal
line
tangent
line
tDS tDH
tangent
line
V
IL
(DC)max
V
IL
(AC)max
nominal
line
V
SS
∆
TF
V
REF
to ac
region
∆
TR
Setup Slew Rate
tangent line[V
IH
(AC)min - V
REF
(DC)]
Rising Signal=
∆
TR
Setup Slew Rate
tangent line[V
REF
(DC) - V
IL
(AC)max]
Falling Signal
=
∆
TF
NOTE
: DQS signal must be monotonic between V
IL
(DC)max and V
IH
(DC)min.
Figure 10. IIIustration of tangent line for tDS (single-ended DQS)
- 30 -
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