K4T1G084QF-BCE6000 View Datasheet(PDF) - Samsung
Part Name
Description
Manufacturer
K4T1G084QF-BCE6000 Datasheet PDF : 46 Pages
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K4T1G044QF
K4T1G084QF
K4T1G164QF
datasheet
Rev. 1.11
DDR2 SDRAM
3.2 x8 Package Pinout (Top view) : 60ball FBGA Package
1
2
3
456
7
8
9
A
VDD
NU/RDQS
VSS
B
DQ6
VSSQ DM/RDQS
C
VDDQ
DQ1
VDDQ
D
DQ4
VSSQ
DQ3
E
VDDL
VREF
VSS
F
CKE
WE
G
BA2
BA0
BA1
H
A10/AP
A1
J
VSS
A3
A5
K
A7
A9
L
VDD
A12
NC
VSSQ
DQS
VDDQ
DQ2
VSSDL
RAS
CAS
A2
A6
A11
NC
DQS
VSSQ
DQ0
VSSQ
CK
CK
CS
A0
A4
A8
A13
VDDQ
DQ7
VDDQ
DQ5
VDD
ODT0
VDD
VSS
NOTE :
1. Pins B3 and A2 have identical capacitances as pins B7 and A8.
2. For a Read, when enabled, strobe pair RDQS & RDQS are identical in function and timing to strobe pair DQS & DQS and input data masking
function is disabled.
3. The function of DM or RDQS/RDQS is enabled by EMRS command.
4. VDDL and VSSDL are power and ground for the DLL. It is recommended that they be isolated on the device from VDD,VDDQ, VSS, and VSSQ.
Ball Locations (x8)
Populated ball
Ball not populated
Top view
(See the balls through package)
123456789
A
B
C
D
E
F
G
H
J
K
L
-6-
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