K6R4016C1D-JP08 View Datasheet(PDF) - Samsung
Part Name
Description
Manufacturer
K6R4016C1D-JP08 Datasheet PDF : 12 Pages
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K6R4016C1D
PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS* (TA=0 to 70°C)
Parameter
Symbol
Min
Typ
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
VCC
4.5
5.0
VSS
0
0
VIH
2.2
-
VIL
-0.5**
-
* The above parameters are also guaranteed at industrial temperature range.
** VIL(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA.
*** VIH(Max) = V CC + 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA.
Max
5.5
0
VCC+0.5***
0.8
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Symbol
ILI
ILO
ICC
ISB
ISB1
VOL
VOH
Test Conditions
VIN=VSS to VCC
CS = VIH or O E=VIH or WE=V IL
VOUT=VSS to VCC
Min. Cycle, 100% Duty
CS = VIL, VIN=V I H or VIL, IOUT=0mA
Com.
Ind.
Min. Cycle, CS=V I H
f=0MHz, CS ≥V CC-0.2V,
VIN≥VCC-0.2V or VIN≤0.2V
IOL = 8 m A
IOH=-4mA
10ns
10ns
Min Max Unit
-2
2
µA
-2
2
µA
-
65
mA
-
75
-
20
mA
-
5
-
0.4
V
2.4
-
V
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Symbol
Input/Output Capacitance
CI/O
Input Capacitance
CIN
* Capacitance is sampled and not 100% tested.
Test Conditions
VI/O=0V
VIN=0V
TYP
-
-
Max
8
6
Unit
pF
pF
-5-
Rev 2.0
June 2003
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