K6R1016V1D-JC08(2001) View Datasheet(PDF) - Samsung
Part Name
Description
Manufacturer
K6R1016V1D-JC08 Datasheet PDF : 11 Pages
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K6R1016V1D
for AT&T
CMOS SRAM
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=3.3±0.3V, unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Current
Symbol
ILI
ILO
ICC
Test Conditions
VIN=VSS to VCC
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
Min. Cycle, 100% Duty
CS=VIL, VIN=VIH or VIL, IOUT=0mA
Com.
Ind.
8ns
10ns
8ns
Min Max Unit
-2
2
µA
-2
2
µA
-
80
mA
-
65
-
90
Standby Current
ISB
Min. Cycle, CS=VIH
ISB1
f=0MHz, CS≥VCC-0.2V,
VIN≥VCC-0.2V or VIN≤0.2V
Output Low Voltage Level
VOL
IOL=8mA
Output High Voltage Level
VOH
IOH=-4mA
10ns
-
75
-
20
mA
-
5
-
0.4
V
2.4
-
V
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
Symbol
CI/O
CIN
Test Conditions
MIN
VI/O=0V
-
VIN=0V
-
Max
8
6
Unit
pF
pF
* Capacitance is sampled and not 100% tested.
AC CHARACTERISTICS(TA=0 to 70°C, Vcc=3.3V+0.3V/-0.15V, unless otherwise noted.)
TEST CONDITIONS*
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
Value
0V to 3V
3ns
1.5V
See below
* The above test conditions are also applied at industrial temperature range.
Output Loads(A)
DOUT
ZO = 50Ω
RL = 50Ω
VL = 1.5V
30pF*
Output Loads(B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
DOUT
353Ω
+3.3V
319Ω
5pF*
* Capacitive Load consists of all components of the
test environment.
-5-
* Including Scope and Jig Capacitance
Revision 1.0
December 2001
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