K6T4008C1B View Datasheet(PDF) - Samsung
Part Name
Description
Manufacturer
K6T4008C1B Datasheet PDF : 9 Pages
| |||
K6T4008C1B Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
VIH
VIL
Note:
1. Commercial Product: TA=0 to 70°C, otherwise specified
Industrial Product: TA=-40 to 85°C, otherwise specified
2. Overshoot: VCC+3.0V in case of pulse width ≤ 30ns
3. Undershoot: -3.0V in case of pulse width ≤ 30ns
4. Overshoot and undershoot are sampled, not 100% tested.
Min
4.5
0
2.2
-0.53)
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Typ
Max
5.0
5.5
0
0
-
Vcc+0.52)
-
0.8
Min
Max
-
8
-
10
Unit
V
V
V
V
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min Typ Max Unit
Input leakage current
ILI
VIN=Vss to Vcc
-1
-
1 µA
Output leakage current
ILO
CS=VIH or OE=VIH or WE=VIL, VIO=Vss to Vcc
-1
-
1 µA
Operating power supply
ICC
IIO=0mA, CS=VIL, VIN=VIL or VIH, Read
- 7.5 15 mA
Average operating current
ICC1
Cycle time=1µs, 100% duty, IIO=0mA
CS≤0.2V, VIN≥0.2V or VIN ≥ Vcc-0.2V
Read -
Write -
4
10 mA
27 40
ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL -
65 80 mA
Output low voltage
VOL IOL=2.1mA
-
- 0.4 V
Output high voltage
VOH IOH=-1.0mA
2.4 -
-
V
Standby Current(TTL)
ISB
CS=VIH, Other inputs = VIL or VIH
-
-
3 mA
K6T4008C1B-L -
2 100 µA
Standby Current(CMOS)
ISB1 CS≥Vcc-0.2V, Other inputs=0~Vcc
K6T4008C1B-B -
K6T4008C1B-P -
1 20 µA
2 100 µA
K6T4008C1B-F -
1 50 µA
4
Revision 3.0
September 1998
Share Link: 