KC846S View Datasheet(PDF) - TY Semiconductor
Part Name
Description
Manufacturer
KC846S Datasheet PDF : 2 Pages
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SSMMDD TTyyppee
Product specification
KC846S(BC846S)
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current gain *
Collector-emitter saturation voltage*
Base-emitter saturation voltage*
Base-emitter voltage*
Collector-base capacitance
Emitter-base capacitance
Noise figure
Transition frequency
Symbol
Testconditons
Min Typ Max Unit
VCBO IC = 10 A, IE = 0
80
V
VCEO IC = 10 mA, IB = 0
65
V
VEBO
ICBO
IE = 10 A, IC = 0
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0 , TA = 150
6
V
15 nA
5
A
IC = 10 A, VCE = 5 V
hFE
IC = 2 mA, VCE = 5 V
250
200 290 450
IC = 10 mA, IB = 0.5 mA
VCE(sat)
IC = 100 mA, IB = 5 mA
90 250
mV
200 650
IC = 10 mA, IB = 0.5 mA
VBE(sat)
IC = 100 mA, IB = 5 mA
700
mV
900
IC = 2 mA, VCE = 5 V
VBE(ON)
IC = 10 mA, VCE = 5 V
580 660 700
mV
770
Ccb VCB = 10 V, f = 1 MHz
2
pF
Ceb VEB = 0.5 V, f = 1 MHz
10
pF
F
IC = 200 A, VCE = 5 V, RS = 2 k ,f = 1
kHz, f = 200 Hz
10 dB
fT IC = 20 mA, VCE = 5 V, f = 100 MHz
250
MHz
* Pulse test: t < 300 s; D < 2%
Marking
Marking
1D
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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