KM681001B View Datasheet(PDF) - Samsung
Part Name
Description
Manufacturer
KM681001B Datasheet PDF : 9 Pages
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PRELIMINARY
KM681001B
CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
Parameter
Voltage on Any Pin Relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Symbol
VIN, VOUT
VCC
PD
TSTG
TA
Rating
-0.5 to 7.0
-0.5 to 7.0
1.0
-65 to 150
0 to 70
Unit
V
V
W
°C
°C
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
VCC
VSS
VIH
VIL
Min
4.5
0
2.2
-0.5*
Typ
Max
Unit
5.0
5.5
V
0
0
V
-
VCC+0.5**
V
-
0.8
V
NOTE: * VIL(Min) = -2.0V a.c(Pulse Width≤10ns) for I≤20mA
** VIH(Max) = VCC + 2.0V a.c (Pulse Width≤10ns) for I≤20mA
DC AND OPERATING CHARACTERISTICS(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
ILI
VIN = VSS to VCC
-2
2
µA
Output Leakage Current
ILO
CS1=VIH or CS2=VIL or OE=VIH or WE=VIL,
VOUT = VSS to VCC
-2
2
µA
Operating Current
ICC
Min. Cycle, 100% Duty CS1=VIL,
15ns
-
CS2=VIH, VIN=VIH or VIL, IOUT=0mA
20ns
-
125
mA
123
Standby Current
ISB
Min. Cycle, CS1=VIH or CS2=VIL
-
20
mA
ISB1
f=0MHz, CS1≥VCC-0.2V or CS2≤0.2V,
VIN≥VCC-0.2V or VIN≤0.2V
-
5
Output Low Voltage Level
VOL
IOL=8mA
-
0.4
V
Output High Voltage Level
VOH
IOH=-4mA
2.4
-
V
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Symbol
Input/Output Capacitance
CI/O
Input Capacitance
CIN
* NOTE : Capacitance is sampled and not 100% tested.
Test Conditions
MIN
VI/O=0V
-
VIN=0V
-
-3-
Max
Unit
8
pF
6
pF
Rev 2.0
February 1998
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