J5502 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

J5502

NPN Planar Silicon Transistor

Fairchild Semiconductor 

KSC5502

NPN Planar Silicon Transistor

High Voltage Power Switch Mode Application

• Small Variance in Storage Time

• Wide Safe Operating Area

• Suitable for Electronic Ballast Application

April 2008

Equivalent Circuit

C

B

1

TO-220

E

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings * TC=25°C unless otherwise noted

Symbol

Parameter

Value

BVCBO

Collector-Base Voltage

1200

BVCEO

Collector-Emitter Voltage

600

BVEBO

Emitter-Base Voltage

12

IC

Collector Current (DC)

2

ICP

Collector Current (Pulse)**

4

IB

Base Current (DC)

1

IBP

Collector Current (Pulse)**

2

PC

Collector Dissipation(TC=25°C)

50

TJ

Junction Temperature

150

TSTG

Storage Junction Temperature Range

- 65 ~ 150

EAS

Avalanche Energy(Tj=25°C)

2.5

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

** Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%

Thermal Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

RθJC

RθJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Value

2.5

85

Units

V

V

V

A

A

A

A

W

°C

°C

mJ

Units

°C/W

°C/W

Ordering Information

Part Number

KSC5502TU

Marking

J5502

Package

TO-220

Packing Method

TUBE

© 2008 Fairchild Semiconductor Corporation

KSC5502 Rev. A1

1

www.fairchildsemi.com

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