KSH13009F View Datasheet(PDF) - Shantou Huashan Electronic Devices
Part Name
Description
Manufacturer
KSH13009F Datasheet PDF : 3 Pages
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
KSH13009F
█ HIGH VOLTAGE SWITCH MODE APPLICICATION
High Speed Switching
Suitable for Switching Regulator and Montor Control
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation（Tc=25℃）…………………… 50W
VCBO——Collector-Base Voltage…………………………… 700V
VCEO——Collector-Emitter Voltage………………………… 400V
VEBO——Emitter-Base Voltage……………………………… 9V
IC——Collector Current（DC）……………………………… 12A
ICP——Collector Current（Pulse）…………………………… 24A
IB——Base Current……………………………………………6A
█ 电参数（Ta=25℃）
Symbol
Characteristics
BVCEO Collector-Emitter Sustaining Voltage
Min Typ Max
400
IEBO
Emitter-Base Cut-off Current
1
HFE
DC Current Gain
8
40
6
30
VCE(sat) Collector- Emitter Saturation Voltage
1
1.5
3
VBE(sat) Base- Emitter Saturation Voltage
1.2
1.6
Cob
Output Capacitance
180
fT
Current Gain-Bandwidth Product
4
tON
Turn On Time
1.1
tS
Storage Time
3.0
tF
Fall Time
0.7
TO-220F
1―Base，B
2―Collector，C
3―Emitter, E
Unit
V
mA
V
V
V
V
V
pF
MHz
μs
μs
μs
Test Conditions
IC=10mA, IB=0
VEB=7V, IC=0
VCE=5V, IC=5A
VCE=5V, IC=8A
IC=5A, IB=1A
IC=8A, IB=1.6A
IC=12A, IB=3A
IC=5A, IB=1A
IC=8A, IB=1.6A
VCB=10V, f=0.1MHz
VCE=10V, IC=0.5A
VCC=125V, IC=8A,
IB1=-IB2=1.6A
RL=15.6Ω
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