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KTC4380 View Datasheet(PDF) - KEC

Part Name
Description
Manufacturer
KTC4380 Datasheet PDF : 3 Pages
1 2 3
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION
FEATURES
·High Voltage : VCEO=160V.
·Large Continuous Collector Current Capability.
·Recommended for LED Drive Application.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Base Current
IB
PC
Collector Power Dissipation
PC*
Junction Temperature
Tj
Storage Temperature Range
Tstg
* : Mounted on ceramic substrate (250mm2 × 0.8t)
RATING
160
160
6
1
0.5
0.5
1
150
-55150
UNIT
V
V
V
A
A
W
KTC4380
EPITAXIAL PLANAR NPN TRANSISTOR
A
H
D
D
K
FF
123
C
G
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
Marking
hFE Rank
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
VCB=160V, IE=0
IEBO
VEB=6V, IC=0
V(BR)CEO IC=10mA, IB=0
hFE (Note) VCE=5V, IC=200mA
VCE(sat)(1) IC=100mA, IB=10mA
VCE(sat)(2) IC=500mA, IB=50mA
VCE(sat)(3) IC=120mA, IB=2mA
VBE
VCE=5V, IC=5mA
fT
VCE=5V, IC=200mA
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
MIN.
-
-
160
160
-
-
-
0.45
-
-
TYP.
-
-
-
-
0.05
-
0.13
-
100
15
MAX.
1.0
1.0
-
320
0.1
1.5
-
0.75
-
-
UNIT
μA
μA
V
-
V
V
V
V
MHz
pF
2010. 7. 13
Revision No : 3
1/3

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