DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

76105SK8 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
76105SK8 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
HUF76105SK8
Typical Performance Curves (Continued)
25
250µs PULSE TEST
DUTY CYCLE = 0.5% MAX
20 VDD = 15V
15
-55oC
25oC
150oC
10
5
0
0
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
25
VGS = 10V
VGS = 5V
20
VGS = 4V
15
10
VGS = 3V
5
TA = 25oC 250µs PUVLGSSE= T3E.5SVT
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
110
ID = 5.5A
90
250µs PULSE TEST
DUTY CYCLE = 0.5% MAX
70
ID = 1.4A
50
30
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.8
250µs PULSE TEST
DUTY CYCLE = 0.5% MAX
1.6
VGS = 10V, ID = 5.5A
1.4
1.2
1.0
0.8
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
VGS = VDS, ID = 250µA
1.1
1.0
0.9
0.8
0.7
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1.15
ID = 250µA
1.1
1.05
1.0
0.95
0.9
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
©2003 Fairchild Semiconductor Corporation
HUF76105SK8 Rev. B1

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]