L6225PD View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
L6225PD Datasheet PDF : 20 Pages
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ELECTRICAL CHARACTERISTICS
(Tamb = 25 °C, Vs = 48V, unless otherwise specified)
Symbol
Parameter
Test Conditions
VSth(ON) Turn-on Threshold
VSth(OFF) Turn-off Threshold
IS Quiescent Supply Current
All Bridges OFF;
Tj = -25°C to 125°C (7)
Tj(OFF) Thermal Shutdown Temperature
Output DMOS Transistors
RDS(ON) High-Side + Low-Side Switch ON Tj = 25 °C
Resistance
Tj =125 °C (7)
IDSS Leakage Current
EN = Low; OUT = VS
EN = Low; OUT = GND
Source Drain Diodes
VSD Forward ON Voltage
ISD = 1.4A, EN = LOW
trr Reverse Recovery Time
If = 1.4A
tfr Forward Recovery Time
Logic Input
VIL Low level logic input voltage
VIH High level logic input voltage
IIL Low Level Logic Input Current GND Logic Input Voltage
IIH High Level Logic Input Current 7V Logic Input Voltage
Vth(ON) Turn-on Input Threshold
Vth(OFF) Turn-off Input Threshold
Vth(HYS) Input Threshold Hysteresis
Switching Characteristics
tD(on)EN Enable to out turn ON delay time (8) ILOAD =1.4A, Resistive Load
tD(on)IN Input to out turn ON delay time ILOAD =1.4A, Resistive Load
(dead time included)
tRISE Output rise time(8)
ILOAD =1.4A, Resistive Load
tD(off)EN Enable to out turn OFF delay time (8) ILOAD =1.4A, Resistive Load
tD(off)IN Input to out turn OFF delay time ILOAD =1.4A, Resistive Load
tFALL Output Fall Time (8)
ILOAD =1.4A, Resistive Load
L6225
Min Typ Max Unit
5.8
6.3
6.8
V
5
5.5
6
V
5
10
mA
165
°C
1.47 1.69
Ω
2.35 2.70
Ω
2
mA
-0.3
mA
1.15 1.3
V
300
ns
200
ns
-0.3
0.8
V
2
7
V
-10
µA
10
µA
1.8
2.0
V
0.8
1.3
V
0.25 0.5
V
500
800
ns
1.9
µs
40
250
ns
500 800 1000 ns
500 800 1000 ns
40
250
ns
5/20
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