PEMT1 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PEMT1 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose double transistor
Product specification
PEMT1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering is reflow soldering.
CONDITIONS
notes 1 and 2
VALUE
416
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
Per transistor
ICBO
collector-base cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
MIN.
MAX.
UNIT
VCB = −30 V; IE = 0
−
VCB = −30 V; IE = 0; Tj = 150 °C
−
VEB = −4 V; IC = 0
−
VCE = −6 V; IC = −1 mA
120
IC = −50 mA; IB = −5 mA; note 1
−
VCB = −12 V; IE = Ie = 0; f = 1 MHz −
VCE = −12 V; IC = −2 mA;
100
f = 100 MHz
−100
−10
−100
−
−200
2.2
−
nA
µA
nA
mV
pF
MHz
400
handbook, halfpage
hFE
300
MHB987
200
100
0
−10−1
−1
VCE = −5 V.
−10
−102
−103
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
2001 Nov 07
3
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