Chip Super Fast Rectifiers
SFM11-M THRU SFM18-M
Formosa MS
1.0A Surface Mount Super
Fast Rectifiers-50-600V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Tiny plastic SMD package.
• High current capability.
• Superfast recovery time for switching mode application.
• High surge current capability.
• Glass passivated chip junction.
• Lead-free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen free parts, ex. SFM11-M-H.
Package outline
SOD-123
0.154(3.9)
0.138(3.5)
0.012(0.3) Typ.
0.075(1.9)
0.060(1.5)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123 / MINI SMA
• Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.018 gram
0.028(0.7) Typ.
0.067(1.7)
0.051(1.3)
0.028(0.7) Typ.
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX.
Forward rectified current
See Fig.2
IO
1.0
UNIT
A
Forward surge current
8.3ms single half sine-wave (JEDEC methode)
IFSM
25
A
Reverse current
Diode junction capacitance
Storage temperature
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
f=1MHz and applied 4V DC reverse voltage
5.0
IR
μA
100
CJ
10
pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
RM
*
S
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
trr *5
(ns)
SFM11-M 50
35
50
SFM12-M 100
SFM13-M 150
70
100
105
150
0.95
SFM14-M 200
SFM15-M 300
SFM16-M 400
140
200
210
300
280
400
35
1.25
SFM17-M 500
SFM18-M 600
350
500
420
600
1.70
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.0A
*5 Maximum Reverse recovery time, note 1
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 2
Document ID Issued Date
DS-121401 2008/02/10
Revised Date Revision
2012/10/29
E
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