PTF10122 View Datasheet(PDF) - Ericsson
Part Name
Description
Manufacturer
PTF10122 Datasheet PDF : 6 Pages
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PTF 10122
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA
Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V
Gate Threshold Voltage
VDS = 10 V, ID = 150 mA
Forward Transconductance
VDS = 10 V, ID = 2 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C)
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
12
70
11 Gain (dB)
10
Output Power (W) 60
50
9
40
8
7
2000
VDD = 28 V
IDQ = 600 mA
30
Efficiency (%)
20
2100
2200
2300
Frequency (MHz)
e
Symbol
V(BR)DSS
IDSS
VGS(th)
gfs
Min
65
—
3.0
—
Typ Max Units
—
—
Volts
—
2.0
mA
—
5.0
Volts
4.0
—
Siemens
Symbol
VDSS
VGS
TJ
PD
TSTG
RqJC
Value
65
±20
200
237
1.35
–40 to +150
0.74
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
14
50
13
12
11 Gain
10
9
8
7
6
2100
Efficiency @ P-1dB
40
30
VDD = 28 V
IDQ = 600 mA
POUT = 15 W
200
-5
Return Loss -10
-1150
-20
-205
2125
2150
2175
2200
Frequency (MHz)
2
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