LX5512E(2004) View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
Manufacturer
LX5512E Datasheet PDF : 10 Pages
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LX5512E
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, the following specifications apply over the operating ambient temperature 0°C ≤ TA ≤ 70°C except where
otherwise noted and the following test conditions: Vc = 3.3V, Vref = 2.9V, Icq = 50mA, TA = 25°C
Parameter
Symbol
Test Conditions
Frequency Range
Power Gain at Pout = 19dBm
EVM at Pout = 19dBm
Total Current at Pout = 19dBm
Quiescent Current
Bias Control Reference Current
Small-Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Second Harmonic
Third Harmonic
Total Current at Pout=23dBm
2nd side lobe at 23 dBm
Ramp-On Time
Differential Detector response
f
Gp
Ic_total
Icq
Iref
S21
∆S21
∆S21
S11
S22
S12
tON
64GQAM / 54Mbps
For Icq = 50mA
Over 100MHz
0°C to +70°C
Pout = 19dBm
Pout = 19dbm
11 Mbps CCK
11 Mbps CCK
10 ~ 90%
19 dBm OFDM, 100kOhm’s
Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.
LX5512E
Min Typ Max
2.4
2.5
34
3.0
130
50
1.6
34
1.5
1.5
8
10
-50
-40
-40
200
-50
100
1.5
Units
GHz
dB
%
mA
mA
mA
dB
dB
dB
dB
dB
dB
dBc
dBc
mA
dBc
ns
V
Copyright 2000
Rev. 1.2, 2004-01-16
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
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