DC and AC parameters
M27C4001
Table 6. Capacitance (1) (2)
Symbol
Parameter
Test Condition
Min
Max
Unit
CIN
Input Capacitance
VIN = 0V
COUT
Output Capacitance
VOUT = 0V
1. TA = 25 °C, f = 1 MHz.
2. Sampled only, not 100% tested.
.
Table 7.
Read Mode DC Characteristics(1) (2)
6
pF
12
pF
Symbol
Parameter
Test Condition
Min
Max Unit
ILI Input Leakage Current
0V ≤VIN ≤VCC
ILO Output Leakage Current
0V ≤VOUT ≤VCC
ICC Supply Current
E = VIL, G = VIL,
IOUT = 0mA, f = 5MHz
ICC1 Supply Current (Standby) TTL
E = VIH
ICC2
Supply Current (Standby)
CMOS
E > VCC – 0.2V
±10
µA
±10
µA
30
mA
1
mA
100
µA
IPP
VIL
VIH(3)
VOL
VOH
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
VPP = VCC
IOL = 2.1mA
IOH = –400µA
IOH = –100µA
10
µA
–0.3
0.8
V
2
VCC + 1 V
0.4
V
2.4
V
VCC – 0.7V
V
1. TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC
2. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP..
3. Maximum DC voltage on Output is VCC +0.5V.
Table 8. Programming Mode DC Characteristics (1) (2)
Symbol
Parameter
Test Condition
Min
Max
Unit
ILI Input Leakage Current
0 ≤VIN ≤VCC
±10
µA
ICC Supply Current
50
mA
IPP Program Current
E = VIL
50
mA
VIL Input Low Voltage
–0.3
0.8
V
VIH Input High Voltage
2
VCC + 0.5
V
VOL Output Low Voltage
IOL = 2.1mA
0.4
V
VOH Output High Voltage TTL
IOH = –400µA
2.4
V
VID A9 Voltage
11.5
12.5
V
1. TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V.
2. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
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