MT4LC8M8B6 View Datasheet(PDF) - Micron Technology

Part Name

Description

Manufacturer

MT4LC8M8B6

512K x 32 x 4banks, 143MHz DRAM

Micron Technology 

8 MEG x 8

FPM DRAM

ICC OPERATING CONDITIONS AND MAXIMUM LIMITS

(Notes: 1, 2, 3, 5, 6) (VCC = +3.3V ±0.3V)

PARAMETER/CONDITION

STANDBY CURRENT: TTL

(RAS# = CAS# = VIH)

STANDBY CURRENT: CMOS

(RAS# = CAS# ž VCC - 0.2V; DQs may be left open;

Other inputs: VIN • VCC - 0.2V or VIN £ 0.2V)

OPERATING CURRENT: Random READ/WRITE

Average power supply current

(RAS#, CAS#, address cycling: tRC = tRC [MIN])

OPERATING CURRENT: FAST PAGE MODE

Average power supply current (RAS# = VIL,

CAS#, address cycling: tPC = tPC [MIN])

REFRESH CURRENT: RAS#-ONLY

Average power supply current

(RAS# cycling, CAS# = VIH: tRC = tRC [MIN])

REFRESH CURRENT: CBR

Average power supply current

(RAS#, CAS#, address cycling: tRC = tRC [MIN])

REFRESH CURRENT: Extended (“S” version only)

Average power supply current: CAS# = 0.2V or

CBR cycling; RAS# = tRAS (MIN); WE# = VCC - 0.2V;

A0-A11, OE# and DIN = VCC - 0.2V or 0.2V

(DIN may be left open)

REFRESH CURRENT: Self (“S” version only)

Average power supply current: CBR with

RAS# • tRASS (MIN) and CAS# held LOW;

WE# = VCC - 0.2V; A0-A11, OE# and DIN =

VCC - 0.2V or 0.2V (DIN may be left open)

4K

8K

SYMBOL SPEED REFRESH REFRESH UNITS NOTES

ICC1

ALL

1

1

mA

ICC2

ALL

500

ICC3

-5

175

-6

165

ICC4

-5

105

-6

95

ICC5

-5

175

-6

165

ICC6

-5

175

-6

165

500

µA

135

mA 25

125

105

mA 25

95

135

mA 22

125

175

mA 4, 7

165

ICC7

ALL

400

400

µA 4, 7

ICC8

ALL

400

400

µA 4, 7

8 Meg x 8 FPM DRAM

D19_2.p65 – Rev. 5/00

5

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2000, Micron Technology, Inc.

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