HP3103 View Datasheet(PDF) - Intersil
Part Name
Description
Manufacturer
HP3103 Datasheet PDF : 6 Pages
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HPLR3103, HPLU3103
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
(PCB Mount Steady State)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
Pulsed Source to Drain Current (Note 2)
ISD
MOSFET
Symbol Showing
D
ISDM
The Integral
Reverse P-N
Junction Diode
G
S
Source to Drain Diode Voltage (Note 3)
VSD
ISD = 28A
Reverse Recovery Time (Note 3)
trr
ISD = 34A, dISD/dt = 100A/µs
Reverse Recovered Charge (Note 3)
QRR
ISD = 34A, dISD/dt = 100A/µs
NOTES:
2. Repetitive rating; pulse width limited by maximum junction temperature (See Figure 11).
3. Pulse width ≤ 300µs; duty cycle ≤ 2%.
4. VDD = 15V, starting TJ = 25oC, L = 300µH, RG = 25Ω, peak IAS = 34A, (Figure 10).
MIN TYP
-
-
-
-
-
-
MAX
1.4
110
50
UNITS
oC/W
oC/W
oC/W
MIN TYP MAX UNITS
-
- 52 (Note A
1)
-
-
220
A
-
-
1.3
V
-
81
120
ns
-
210
310
nC
Typical Performance Curves
1000
100
VGS IN DECENDING ORDER
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V
10
20µs PULSE WIDTH
TC = 25oC
1
0.1
1.0
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 1. OUTPUT CHARACTERISTICS
1000
100
VGS IN DECENDING ORDER
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V
10
20µs PULSE WIDTH
TC = 150oC
1
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 2. OUTPUT CHARACTERISTICS
6-5
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