M29W017D View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
M29W017D Datasheet PDF : 36 Pages
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M29W017D
Table 19. CFI Query System Interface Information
Address
Data
Description
VCC Logic Supply Minimum Program/Erase voltage
1Bh
27h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
VCC Logic Supply Maximum Program/Erase voltage
1Ch
36h
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
1Dh
00h
VPP [Programming] Supply Minimum Program/Erase voltage
1Eh
00h
VPP [Programming] Supply Maximum Program/Erase voltage
1Fh
04h
Typical timeout per single byte/word program = 2n µs
20h
00h
Typical timeout for minimum size write buffer program = 2n µs
21h
0Ah
Typical timeout per individual block erase = 2n ms
22h
00h
Typical timeout for full chip erase = 2n ms
23h
04h
Maximum timeout for byte/word program = 2n times typical
24h
00h
Maximum timeout for write buffer program = 2n times typical
25h
03h
Maximum timeout per individual block erase = 2n times typical
26h
00h
Maximum timeout for chip erase = 2n times typical
Value
2.7V
3.6V
NA
NA
16µs
NA
1s
NA
256µs
NA
8s
NA
Table 20. Device Geometry Definition
Address
Data
Description
27h
15h
Device Size = 2n in number of bytes
28h
29h
00h
00h
Flash Device Interface Code description
2Ah
2Bh
00h
00h
Maximum number of bytes in multi-byte program or page = 2n
Number of Erase Block Regions within the device.
2Ch
01h
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
2Dh
1Fh
Region 1 Information
2Eh
00h
Number of identical size erase block = 001Fh+1
2Fh
00h
Region 1 Information
30h
01h
Block size in Region 1 = 0100h * 256 byte
Value
2 MByte
x8
Async.
NA
1
32
64 KByte
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