M29W128 View Datasheet(PDF) - Numonyx -> Micron

Part Name

Description

Manufacturer

M29W128

128 Mbit 3V Supply Flash Memory

Numonyx -> Micron 

M29W128FH

M29W128FL

128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block)

3V Supply Flash Memory

Feature summary

■ Supply voltage

– VCC = 2.7 to 3.6V for Program, Erase and

Read

– VPP =12V for Fast Program (optional)

■ Asynchronous Random/Page Read

– Page Width: 8 Words/16 Bytes

– Page Access: 25, 30ns

– Random Access: 60, 70ns

■ Programming time

– 10µs per Byte/Word (typical)

– 4 Words / 8 Bytes Program

– 32-Word (64-Bytes) Write Buffer

■ 64 KByte (32 KWord) Uniform Blocks

■ Program/ Erase Suspend and Resume Modes

– Read from any Block during Program

Suspend

– Read and Program another Block during

Erase Suspend

■ Unlock Bypass Program

– Faster Production/Batch Programming

■ Common Flash Interface

– 64 bit Security Code

■ 100,000 Program/Erase cycles per block

■ Low power consumption

– Standby and Automatic Standby

■ Hardware Block Protection

– VPP/WP pin for fast program and write

protect of the highest (M29W128FH) or

lowest block (M29W128FL)

■ Extended Memory Block:

Extra block used as security block or to store

additional information

TSOP56 (N)

14 x 20mm

BGA

TBGA64 (ZA)

10 x 13mm

■ Electronic Signature

– Manufacturer Code: 0020h

– Device Code:

M29W128FH: 227Eh + 2212h + 228Ah

M29W128FL: 227Eh + 2212h + 228Bh

■ ECOPACK® packages

December 2007

Rev 7

1/78

www.numonyx.com

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