M29W128 View Datasheet(PDF) - Numonyx -> Micron

Part Name

Description

Manufacturer

M29W128

128 Mbit 3V Supply Flash Memory

Numonyx -> Micron 

Command interface

M29W128FH, M29W128FL

Table 15. Program, Erase Times and Program, Erase Endurance cycles

Parameter

Min

Typ (1)(2)

Max(2)

Unit

Chip Erase

Block Erase (64 KBytes)

Erase Suspend Latency Time

80

400(3)

s

0.8

6(4)

s

50(4)

µs

Single or Multiple Byte Program

(1, 2, 4 or 8 Bytes at-a-time)

Byte Program

Write to Buffer and Program

(64 Bytes at-a-time)

VPP/WP

=VPPH

VPP/WP=VIH

Single or Multiple Word Program

(1, 2 or 4 Words at-a-time)

Word Program

Write to Buffer and Program

(32 Words at-a-time)

Chip Program (Byte by Byte)

VPP/WP=

VPPH

VPP/WP=VIH

Chip Program (Word by Word)

Chip Program (Quadruple Byte or Double Word)

Chip Program (Octuple Byte or Quadruple Word)

10

µs

200(3)

90

µs

280

10

µs

200(3)

90

µs

280

80

400(3)

s

40

200(3)

s

20

100(3)

s

10

50(3)

s

Program Suspend Latency Time

5

15

µs

Program/Erase Cycles (per Block)

100,000

cycles

Data Retention

20

years

1. Typical values measured at room temperature and nominal voltages.

2. Sampled, but not 100% tested.

3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.

4. Maximum value measured at worst case conditions for both temperature and VCC.

36/78

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