MDS550L View Datasheet(PDF) - GHz Technology
Part Name
Description
Manufacturer
MDS550L Datasheet PDF : 1 Pages
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R.3.110599
MDS550L
550 Watts, 45 Volts, Pulsed
Avionics 1090 MHz
PRELIMINARY
GENERAL DESCRIPTION
The MDS550L is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1090 MHz. The transistor
includes input and output prematch for broadband performance. The device has
gold thin-film metallization and diffused ballasting for proven highest MTTF.
Low thermal resistance. Package reduces junction temperature, extends life,
high strength lead braze.
CASE OUTLINE
55SW Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C
1166 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
Emitter to Base Voltage (BVebo)
Collector Current (Ic)
55 V
3.5 V
40 mA
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
Pout
Pin
Pg
ηc
VSWR
Pd
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
Pulse Droop
TEST CONDITIONS
F = 1090 MHz (Note 2)
Vcc = 45 Volts
PW = NOTE 1
DF = NOTE 1
f = 1090 MHz
f = 1090 MHz (NOTE 2)
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo*
BVces
hFE*
θjc2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
Ie = 50 mA
Ic = 30 mA
Vce = 5V, Ic = 5.0 A
NOTE 1: MODE-S PULSE BURST 2160 µS @ 50% DUTY CYCLE, LONG TERM DF = 1%.
NOTE 2: AT RATED PULSE CONDITIONS
*: Not measureable due to internal EB returns
Initial issue May 1999
MIN TYP MAX UNITS
550
W
90
W
7.8
dB
45
%
4:1
0.5
3.5
V
55
V
20
0.15 °C/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.GHZ.COM OR CONTACT OUR FACTORY DIRECT.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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