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Part Name
Description
DSF11060SG55 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
Manufacturer
DSF11060SG55
Fast Recovery Diode
Dynex Semiconductor
DSF11060SG55 Datasheet PDF : 6 Pages
1
2
3
4
5
6
CHARACTERISTICS
Symbol
Parameter
V
FM
I
RRM
t
rr
Q
RA1
I
RM
K
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge (50% chord)
Reverse recovery current
Soft factor
V
TO
Threshold voltage
r
T
Slope resistance
V
FRM
Forward recovery voltage
Conditions
At 600A peak, T = 25
o
C
case
At V , T = 125
o
C
RRM case
I
F
=
1000A,
di /dt
RR
=
100A/
µ
s
T = 125
o
C, V = 100V
case
R
At T
vj
= 125
o
C
At T
vj
= 125
o
C
di/dt = 1000A/
µ
s, T
j
= 100
o
C
DEFINITION OF K FACTOR AND Q
RA1
dI
R
/dt
t
1
0.5x I
RR
I
RR
Q
RA1
= 0.5x I
RR
(t
1
+ t
2
)
t
2
k = t
1
/t
2
τ
DSF11060SG
Typ. Max. Units
-
3.8
V
-
70 mA
6.0
-
µ
s
- 1000
µ
C
350
-
A
1.7
-
-
-
1.5
V
-
2.9 m
Ω
-
400
V
3/6
www.dynexsemi.com
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