M470L6423EN0-CLB3 View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

M470L6423EN0-CLB3

DDR SDRAM Unbuffered SODIMM

Samsung 

512MB Unbuffered SODIMM(based on sTSOP)

DDR SDRAM

200Pin Unbuffered SODIMM based on 256Mb E-die (x8)

Ordering Information

Part Number

M470L6423EN0-C(L)B3/A2/B0

Density

512MB

Organization

64M x 64

Component Composition

32Mx8 (K4H560838E) * 16EA

Height

1,250mil

Operating Frequencies

Speed @CL2

Speed @CL2.5

CL-tRCD-tRP

B3(DDR333@CL=2.5)

133MHz

166MHz

2.5-3-3

A2(DDR266@CL=2)

133MHz

133MHz

2-3-3

B0(DDR266@CL=2.5)

100MHz

133MHz

2.5-3-3

Feature

• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe(DQS)

• Differential clock inputs(CK and CK)

• DLL aligns DQ and DQS transition with CK transition

• Programmable Read latency 2, 2.5 (clock)

• Programmable Burst length (2, 4, 8)

• Programmable Burst type (sequential & interleave)

• Edge aligned data output, center aligned data input

• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)

• Serial presence detect with EEPROM

• PCB : Height 1,250 (mil), double (512MB) sided

• SSTL_2 Interface

• 54pin sTSOP(II)-300 package

SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.

Rev. 1.3 March. 2004

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