M470L3223DT0 View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

M470L3223DT0

256MB DDR SDRAM MODULE

Samsung 

M470L3223DT0

DDR SDRAM SPEC Items and Test Conditions

Recommended operating conditions Unless Otherwise Noted, TA=0 to 70°C)

Conditions

Operating current - One bank Active-Precharge;

tRC=tRCmin;

DQ,DM and DQS inputs changing twice per clock cycle;

address and control inputs changing once per clock cycle

Operating current - One bank operation ; One bank open, BL=4, Reads

- Refer to the following page for detailed test condition

Percharge power-down standby current; All banks idle; power - down mode;

CKE = <VIL(max); Vin = Vref for DQ,DQS and DM

Precharge Floating standby current; CS# > =VIH(min);All banks idle;

CKE > = VIH(min); Address and other control inputs changing once per clock cycle;

Vin = Vref for DQ,DQS and DM

Precharge Quiet standby current; CS# > = VIH(min); All banks idle;

CKE > = VIH(min);

Address and other control inputs stable with keeping >= VIH(min) or =<VIL(max);

Vin = Vref for DQ ,DQS and DM

Active power - down standby current ; one bank active; power-down mode;

CKE=< VIL (max); Vin = Vref for DQ,DQS and DM

Active standby current; CS# >= VIH(min); CKE>=VIH(min);

one bank active; active - precharge; tRC=tRASmax;

DQ, DQS and DM inputs changing twice per clock cycle;

address and other control inputs changing once per clock cycle

Operating current - burst read; Burst length = 2; reads; continguous burst;

One bank active; address and control inputs changing once per clock cycle;

50% of data changing at every burst; lout = 0 m A

Operating current - burst write; Burst length = 2; writes; continuous burst;

One bank active address and control inputs changing once per clock cycle;

DQ, DM and DQS inputs changing twice

per clock cycle, 50% of input data changing at every burst

Auto refresh current; tRC = tRFC(min) - 8*tCK for DDR200 at 100Mhz,

10*tCK for DDR266A & DDR266B at 133Mhz and 12*tCK for DDR333; distributed refresh

Self refresh current; CKE =< 0.2V; External clock should be on;

tCK = 100Mhz for DDR200, 133Mhz for DDR266A & DDR266B and 166Mhz for DDR333

Orerating current - Four bank operation ; Four bank interleaving with BL=4

-Refer to the following page for detailed test condition

Symbol

IDD0

IDD1

IDD2P

IDD2F

IDD2Q

IDD3P

IDD3N

IDD4R

IDD4W

IDD5

IDD6

IDD7A

Rev. 0.0 Dec. 2001

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