M58BW016DB View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
M58BW016DB Datasheet PDF : 69 Pages
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M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Signal descriptions
2.5
Output Disable (GD)
The Output Disable, GD, deactivates the data output buffers. When Output Disable, GD, is at
VIH, the outputs are driven by the Output Enable. When Output Disable, GD, is at VIL, the
outputs are high impedance independently of Output Enable. The Output Disable pin must
be connected to an external pull-up resistor as there is no internal pull-up resistor to drive
the pin.
2.6
Write Enable (W)
The Write Enable, W, input controls writing to the command interface, Address inputs and
Data latches. Both addresses and data can be latched on the rising edge of Write Enable
(also see Latch Enable, L).
2.7
Reset/Power-down (RP)
The Reset/Power-down, RP, is used to apply a hardware reset to the memory. A hardware
reset is achieved by holding Reset/Power-down Low, VIL, for at least tPLPH. Writing is
inhibited to protect data, the command interface and the Program/Erase controller are reset.
The Status Register information is cleared and power consumption is reduced to deep
power-down level. The device acts as deselected, that is the data outputs are high
impedance.
After Reset/Power-down goes High, VIH, the memory will be ready for Bus Read operations
after a delay of tPHEL or Bus Write operations after tPHWL.
If Reset/Power-down goes Low, VIL, during a Block Erase, or a Program the operation is
aborted, in a time of tPLRH maximum, and data is altered and may be corrupted.
During Power-up power should be applied simultaneously to VDD and VDDQ(IN) with RP held
at VIL. When the supplies are stable RP is taken to VIH. Output Enable, G, Chip Enable, E,
and Write Enable, W, should be held at VIH during power-up.
In an application, it is recommended to associate Reset/Power-down pin, RP, with the reset
signal of the microprocessor. Otherwise, if a reset operation occurs while the memory is
performing an erase or program operation, the memory may output the Status Register
information instead of being initialized to the default Asynchronous Random Read.
See Table 21: Reset, Power-down and Power-up AC characteristics and Figure 17: Reset,
Power-down and Power-up AC waveforms - control pins low, for more details.
2.8
Latch Enable (L)
The Bus interface can be configured to latch the Address Inputs on the rising edge of Latch
Enable, L, for Asynchronous Latch Enable Controlled Read or Write or Synchronous Burst
Read operations. In Synchronous Burst Read operations the address is latched on the
active edge of the Clock when Latch Enable is Low, VIL. Once latched, the addresses may
change without affecting the address used by the memory. When Latch Enable is Low, VIL,
the latch is transparent. Latch Enable, L, can remain at VIL for Asynchronous Random Read
and Write operations.
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