M63817FP View Datasheet(PDF) - MITSUBISHI ELECTRIC
Part Name
Description
Manufacturer
M63817FP Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63817P/FP/KP are eight-circuit Single transistor arrays
with clamping diodes. The circuits are made of NPN transis-
tors. Both the semiconductor integrated circuits perform
high-current driving with extremely low input-current supply.
FEATURES
q Three package configurations (P, FP, and KP)
q Medium breakdown voltage (BVCEO ≥ 35V)
q Synchronizing current (IC(max) = 300mA)
q With clamping diodes
q Low output saturation voltage
q Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63817P/FP/KP each have eight circuits consisting of
NPN transistor. A spike-killer clamping diode is provided be-
tween each output pin (collector) and COM pin. The transis-
tor emitters are all connected to the GND pin. The transistors
allow synchronous flow of 300mA collector current. A maxi-
mum of 35V voltage can be applied between the collector
and emitter.
PIN CONFIGURATION
INPUT
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
IN8→ 8
GND 9
18 →O1
17 →O2
16 →O3
15 →O4
14 →O5
13 →O6
OUTPUT
12 →O7
11 →O8
10 →COM COMMOM
Package type 18P4G(P)
NC 1
IN1→ 2
IN2→ 3
IN3→ 4
INPUT
IN4→ 5
IN5→ 6
IN6→ 7
IN7→ 8
IN8→ 9
GND 10
20 NC
19 →O1
18 →O2
17 →O3
16 →O4
15 →O5
OUTPUT
14 →O6
13 →O7
12 →O8
11 →COM COMMOM
NC : No connection
20P2N-A(FP)
Package type 20P2E-A(KP)
CIRCUIT DIAGRAM
COM
OUTPUT
INPUT
10.5k
10k
GND
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit: Ω
Jan. 2000
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