AS4C1M16F5 View Datasheet(PDF) - Alliance Semiconductor

Part Name

Description

Manufacturer

AS4C1M16F5

5V 1M×16 CMOS DRAM (fast-page mode)

Alliance Semiconductor 

Write cycle

Symbol

tWCS

tWCH

tWP

tRWL

tCWL

tDS

tDH

Parameter

Write command setup time

Write command hold time

Write command pulse width

Write command to RAS lead time

Write command to CAS lead time

Data-in setup time

Data-in hold time

Read-modify-write cycle

Symbol

tRWC

tRWD

tCWD

tAWD

Parameter

Read-write cycle time

RAS to WE delay time

CAS to WE delay time

Column address to WE delay time

Refresh cycle

Symbol

tCSR

tCHR

tRPC

tCPT

Parameter

CAS setup time (CAS-before-RAS)

CAS hold time (CAS-before-RAS)

RAS precharge to CAS hold time

CAS precharge time

(CBR counter test)

AS4C1M16F5

®

-50

Min Max

0

–

10

–

10

–

10

–

8

–

0

–

8

–

-60

Min Max

0

–

10

–

10

–

10

–

10

–

0

–

10

–

Unit Notes

ns 11

ns 11

ns

ns

ns

ns 12

ns 12

-50

Min Max

113

–

67

–

32

–

42

–

-60

Min Max

135

–

77

–

35

–

47

–

Unit Notes

ns

ns 11

ns 11

ns 11

-50

Min Max

5

–

8

–

0

–

10

-60

Min Max

5

–

10

–

0

–

10

–

Unit Notes

ns 3

ns 3

ns

ns

4/11/01; v.0.9.1

Alliance Semiconductor

P. 5 of 21

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