MA3X717 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
MA3X717 Datasheet PDF : 3 Pages
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Schottky Barrier Diodes (SBD)
MA3X717 (MA717)
Silicon epitaxial planar type
For switching
For wave detection
s Features
• Low forward voltage VF, optimum for low voltage rectification
• Low VF type of MA3X704A (MA704A)
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• Mini type 3-pin package
s Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Peak forward current
Forward current (DC)
Junction temperature
Storage temperature
VR
30
V
IFM
150
mA
IF
30
mA
Tj
125
°C
Tstg
−55 to +125
°C
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: M2M
Internal Connection
3
s Electrical Characteristics Ta = 25°C
1
2
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
Detection efficiency
IR
VR = 30 V
VF1
IF = 1 mA
VF2
IF = 30 mA
Ct
VR = 1 V, f = 1 MHz
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
η
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
30
µA
0.3
V
1.0
1.5
pF
1.0
ns
65
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz 3. *: trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr
tp
t
10%
Output Pulse
IF
trr
t
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2002
SKH00077BED
1
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