MA700B View Datasheet(PDF) - Semtech Electronics LTD.

Part Name

Description

Manufacturer

MA700B

SILICON SCHOTTKY BARRIER DIODE

Semtech Electronics LTD. 

MA700B

SILICON SCHOTTKY BARRIER DIODE

Max. 0.45

Max. 1.9

Min. 27.5

Black

Cathode Band

Black

Part No.

XXX Max. 2.9

Min. 27.5

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Reverse Voltage

VR

Power Dissipation

Ptot

Peak Surge Curent (Single Cycle 60 Hz Sine Wave)

IFSM

Junction Temperature

Tj

Storage Temperature Range

TS

1) Valid provided that electrodes are kept at ambient temperature.

Glass Case DO-34

Dimensions in mm

Value

Unit

20

V

400 1)

mW

15

A

125

OC

- 55 to + 175

OC

Characteristics at Ta = 25 OC

Parameter

Forward Voltage

at IF = 90 mA

Reverse Leakage Current

at VR = 20 V

Junction Capacitance

at VR = 0 V, f = 1 MHz

Reverse Recovery Time

at IF = IR = 5 mA to 200 mA , recover to 0.1 IR

Symbol

Typ.

Max.

Unit

VF

-

1

V

IR

-

30

μA

Ctot

50

-

pF

trr

10

-

ns

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

®

Dated : 25/06/2007

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