MASW-003103-1364
HMICTM Silicon PIN Diode SP3T Switch
50 MHz - 20 GHz
Rev. V2
Electrical Specifications: TA = 25°C, PIN = 0 dBm, Z0 = 50 Ω, 20mA/-10V
Parameter
Frequency
Units Min. Typ. Max.
Insertion Loss
6 GHz
13 GHz
20 GHz
— 0.50 0.6
dB
—
0.8
1.1
—
1.2
1.4
Isolation
6 GHz
13 GHz
20 GHz
50
54
—
dB
37
40
—
25
31
—
Input Return Loss
6 GHz
13 GHz
20 GHz
19
25
—
dB
14
22
—
14
21
—
Output to Output Isolation
Switching Speed3
Voltage Rating4
6 GHz
13 GHz
20 GHz
—
—
—
57
—
dB
—
42
—
—
30
—
ns
—
20
—
V
—
—
80
Input 0.1dB Compression Point
2 GHz
dBm —
36
—
3. Typical Switching Speed measured fro 10% to 90 % of detected RF signal driven by TTL compatible drivers.
4. Maximum reverse leakage current in either the shunt or series PIN diodes shall be 0.5 uA maximum @ -80 volts.
Absolute Maximum Ratings 5,6
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Applied Reverse Voltage
RF CW Incident Power
Bias Current +25°C
Absolute Maximum
-65 °C to +125 °C
-65 °C to +150 °C
+175 °C
|-80 V|
38dBm CW @ 2GHz, +25°C
33dBm CW @ 20GHz,+25°C
± 50 mA
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These devices are rated at Class 1A Human Body.
Proper ESD control techniques should be used
when handling these devices.
Max Operating Conditions for combination RF
Pwr, DC Bias, & Temp: 33dBm CW @ 20mA per
Diode @ +85ºC @ 2GHz
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6. M/A-COM Tech does not recommend sustained operation
near these survivability limits.
2
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