MASW-008899
GaAs SPDT Switch
DC - 3.0 GHz
Rev. V2
Electrical Specifications: TA = 25°C, VC = 0 V / 3 V, Z0 = 50 Ω 5
Parameter
Test Conditions
Units
Min.
Typ. Max.
Insertion Loss6
1.0 GHz
2.4 GHz
dB
—
0.3
—
dB
—
0.4
0.5
Isolation
1.0 GHz
2.4 GHz
dB
—
24
—
dB
25
27
—
VSWR
0.05 - 3.0 GHz
Ratio
—
1.2:1
—
IP2
Two Tone, +5 dBm / Tone, 5 MHz Spacing
2.4 GHz
dBm
—
80
—
IP3
Linear Pout
Two Tone, +5 dBm / Tone, 5 MHz Spacing
2.4 GHz
2.5 GHz, OFDM, QAM-64,54Mbps, EVM=2.5%
3.0 V
3.3 V
5.0 V
dBm
dBm
dBm
dBm
—
48
—
—
22.5
—
—
24.0
—
—
28.5
—
P1dB
—
dBm
—
28
—
Trise, Tfall
10% to 90% RF and 90% to 10% RF
ns
—
35
—
Ton, Toff
50% control to 90% RF, 50% control to 10% RF
ns
—
40
—
Transients
—
mV
—
10
—
Current
RON
Gate Lag
VC = 3.0 V
µA
t > 10 ms after OFF to ON Switching (settled)
Ω
|ΔRon| between 200 µs and 10 ms after OFF to ON
Switching
Ω
—
5
10
—
1.5
2.5
—
0.15
0.25
5. For positive voltage control, external DC blocking capacitors are required on all RF ports.
6. Insertion Loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz – 1.0 GHz, 39 pF for 0.5 - 3.0 GHz.
Truth Table 7,8
Control
V1
Control
V2
RFC-RF1 RFC-RF2
0
1
On
Off
1
0
Off
On
7. Differential voltage, V (state 1) - V (state 0), must be +2.3 V
minimum and must not exceed 8.5 V.
8. 0 = 0 V ± 0.2 V, 1 = +2.5 V to 5.0 V
Qualification
Qualified to M/A-COM specification REL-201,
Process Flow –2.
Handling Procedures
The following precautions should be observed to
avoid damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be dam-
aged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
2
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