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Part Name
Description
MAT01N View Datasheet(PDF) - Analog Devices
Part Name
Description
Manufacturer
MAT01N
Matched Monolithic Dual Transistor
Analog Devices
MAT01N Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
MAT01–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ V
CB
= 15 V, I
C
= 10
A, T
A
= 25
؇
C, unless otherwise noted.)
Parameter
Symbol
Conditions
MAT01AH
Min Typ Max
MAT01GH
Min Typ Min
Breakdown Voltage
Offset Voltage
Offset Voltage Stability
First Month
Long Term
Offset Current
Bias Current
Current Gain
BV
CEO
V
OS
V
OS
/Time
I
OS
I
B
h
FE
Current Gain Match
Low Frequency Noise
Voltage
Broadband Noise
Voltage
Noise Voltage
Density
∆
h
FE
e
n
p-p
e
n
rms
e
n
Offset Voltage Change
Offset Current Change
Collector-Base
Leakage Current
Collector-Emitter
Leakage Current
Collector-Collector
Leakage Current
Collector Saturation
Voltage
Gain-Bandwidth Product
Output Capacitance
Collector-Collector
Capacitance
∆
V
OS/
∆
V
CB
∆
I
OS/
∆
V
CB
I
CBO
I
CES
I
CC
V
CE(SAT)
f
T
C
OB
C
CC
I
C
= 100
µ
A
(Note 1)
(Note 2)
I
C
= 10 nA
I
C
= 10
µ
A
I
C
= 10 mA
I
C
= 10
µ
A
100 nA
≤
I
C
≤
10 mA
0.1 Hz to 10 Hz
3
1 Hz to 10 kHz
f
O
= 10 Hz
3
f
O
= 100 Hz
3
f
O
= 1000 Hz
3
0
≤
V
CB
≤
30 V
0
≤
V
CB
≤
30 V
V
CB
= 30 V, I
E
= 0
4
V
CE
= 30 V, V
BE
= 0
4, 5
V
CC
= 30 V
5
I
B
= 0.1 mA, I
C
= 1 mA
I
B
= 1 mA, I
C
= 10 mA
V
CE
= 10 V, I
C
= 10 mA
V
CB
= 15 V, I
E
= 0
V
CC
= 0
45
0.04 0.1
2.0
0.2
0.1 0.6
13 20
590
500 770
840
0.7 3.0
0.8
0.23 0.4
0.60
7.0 9.0
6.1 7.6
6.0 7.5
0.5 3.0
2
15
15 50
50 200
20 200
0.12 0.20
0.8
450
2.8
8.5
45
0.10 0.5
2.0
0.2
0.2 3.2
18 40
430
250 560
610
1.0 8.0
1.2
0.23 0.4
0.60
7.0 9.0
6.1 7.6
6.0 7.5
0.8 8.0
3 70
25 200
90 400
30 400
0.12 0.25
0.8
450
2.8
8.5
Units
V
mV
µ
V/Mo
µ
V/Mo
nA
nA
%
%
µ
V p-p
µ
V rms
nV/
√
Hz
nV/
√
Hz
nV/
√
Hz
µ
V/V
pA/V
pA
pA
pA
V
V
MHz
pF
pF
ELECTRICAL CHARACTERISTICS
(@ V
CB
= 15 V, I
C
= 10
A, –55
؇
C
≤
T
A
≤
+125
؇
C, unless otherwise noted.)
Parameter
Symbol
Conditions
MAT01AH
Min Typ Max
MAT01GH
Min Typ Min
Offset Voltage
Average Offset
Voltage Drift
Offset Current
Average Offset
Current Drift
Bias Current
Current Gain
Collector-Base
Leakage Current
Collector-Emitter
Leakage Current
Collector-Collector
Leakage Current
V
OS
TCV
OS
I
OS
TCI
OS
Ι
Β
h
FE
I
CBO
I
CES
I
CC
(Note 6)
(Note 7)
T
A
= 125
°
C, V
CB
= 30 V,
I
E
= 0
4
T
A
= 125
°
C, V
CE
= 30 V,
V
BE
= 0
4, 6
T
A
= 125
°
C, V
CC
= 30 V,
(Note 6)
0.06 0.15
0.15 0.50
0.9 8.0
10 90
28 60
167 400
15 80
50 300
30 200
0.14 0.70
0.35 1.8
1.5 15.0
15 150
36 130
77 300
25 200
90 400
50 400
Units
mV
µ
V/
°
C
nA
pA/
°
C
nA
nA
nA
nA
–2–
REV. A
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