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MAX1710 View Datasheet(PDF) - Maxim Integrated

Part Name
Description
Manufacturer
MAX1710 Datasheet PDF : 28 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
High-Speed, Digitally Adjusted
Step-Down Controllers for Notebook CPUs
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, VBATT = 15V, VCC = VDD = 5V, SKIP = GND, TA = 0°C to +85°C, unless otherwise noted.)
PARAMETER
CONDITIONS
MIN TYP
Overvoltage Trip Threshold
With respect to unloaded output voltage (MAX1710)
(MAX1711/MAX1712)
10.5 12.5
2.21 2.25
Overvoltage Fault Propagation
Delay
FB forced 2% above trip threshold
1.5
Output Undervoltage Protection With respect to unloaded output voltage (MAX1710)
Threshold
(MAX1711/MAX1712)
65
70
0.76 0.8
Output Undervoltage Protection
Time
From SHDN signal going high
10
Current-Limit Threshold
(Positive Direction, Fixed)
LX to PGND, ILIM tied to VCC
90
100
Current-Limit Threshold
(Positive Direction, Adjustable)
LX to PGND RLIM = 100k
RLIM = 400k
40
50
170
200
Current-Limit Threshold
(Negative Direction)
LX to PGND, TA = +25°C
-150 -120
Current-Limit Threshold
(Zero Crossing)
LX to PGND
3
PGOOD Propagation Delay
FB forced 2% below PGOOD trip threshold, falling edge
1.5
PGOOD Output Low Voltage
ISINK = 1mA
PGOOD Leakage Current
High state, forced to 5.5V
Thermal Shutdown Threshold Hysteresis = 10°C
150
VCC Undervoltage Lockout
Threshold
Rising edge, hysteresis = 20mV,
PWM disabled below this level
4.1
DH Gate-Driver On-Resistance BST-LX forced to 5V
DL Gate-Driver On-Resistance
(Pullup)
DL, high state
DL Gate-Driver On-Resistance
(Pulldown)
DL, low state
0.5
DH Gate-Driver Source/Sink
Current
DL Gate-Driver Sink Current
DL Gate-Driver Source Current
Dead Time
SKIP Input Current Logic
Threshold
DH forced to 2.5V, BST-LX forced to 5V
DL forced to 2.5V
DL forced to 2.5V
DL rising
DH rising
To enable no-fault mode, TA = +25°C
1
3
1
35
26
-1.5
PGOOD Trip Threshold
Logic Input High Voltage
Logic Input Low Voltage
Logic Input Current
Logic Input Pullup Current
Measured at FB with respect to unloaded output voltage,
falling edge, hysteresis = 1%
-8
-5
D0–D4, SHDN, SKIP, OVP
D0–D4, SHDN, SKIP, OVP
SHDN, SKIP, OVP
D0–D4, each forced to GND
2.4
-1
3
5
MAX
14.5
2.29
75
0.84
30
UNIT
%
V
µs
%
V
ms
110
mV
60
mV
230
-80
mV
mV
µs
0.4
V
1
µA
°C
4.4
V
5
5
1.7
A
A
A
ns
-0.1
mA
-3
%
V
0.8
V
1
µA
10
µA
_______________________________________________________________________________________ 3

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