MB84VA20 View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

MB84VA20

8M (× 8/× 16) FLASH MEMORY & 2M (× 8) STATIC RAM

Fujitsu 

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-50105-2E

MCP (Multi-Chip Package) FLASH MEMORY & SRAM

CMOS

8M (× 8/× 16) FLASH MEMORY &

2M (× 8) STATIC RAM

MB84VA2002-10/MB84VA2003-10

s FEATURES

• Power supply voltage of 2.7 to 3.6 V

• High performance

100 ns maximum access time

• Operating Temperature

–20 to +85°C

— FLASH MEMORY

• Minimum 100,000 write/erase cycles

• Sector erase architecture

One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes.

Any combination of sectors can be concurrently erased. Also supports full chip erase.

• Boot Code Sector Architecture

MB84VA2002: Top sector

MB84VA2003: Bottom sector

• Embedded EraseTM Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded ProgramTM Algorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready-Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switch themselves to low power mode.

• Low VCC write inhibit ≤ 2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read in another sector within the same device

• Please refer to "MBM29LV800TA/BA" data sheet in detailed function

— SRAM

• Power dissipation

Operating : 35 mA max.

Standby : 50 µA max.

• Power down features using CE1s and CE2s

• Data retention supply voltage: 2.0 V to 3.6 V

Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

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