MB84VD2002 View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

MB84VD2002

8M (× 8/× 16) FLASH MEMORY & 2M (× 8) STATIC RAM

Fujitsu 

MB84VD2002-10/MB84VD2003-10

s DC CHARACTERISTICS

Parameter Parameter Description

Symbol

Test Conditions

Min.

ILI Input Leakage Current

—

–1.0

ILO Output Leakage Current

—

–1.0

Byte

—

ICC1f

Flash VCC Active Current

(Read)

VCCf = VCC Max.,

CEf = VIL

OE = VIH

tCYCLE = 10 MHz

Word

Byte

Word tCYCLE = 5 MHz

—

—

—

ICC2f

Flash VCC Active Current

(Program/Erase)

VCCf = VCC Max., CEf

= VIL, OE = VIH

—

ICC3f***

Flash VCC Active Current

(Read-While-Program)

CE = VIL, OE = VIH

Byte

—

Word

—

ICC4f***

Flash VCC Active Current

(Read-While-Erase)

CE = VIL, OE = VIH

Byte

—

Word

—

Flash VCC Active Current

ICC5f (Erase-Suspend-

CE = VIL, OE = VIH

—

Program)

ICC1s

SRAM VCC Active

Current

VCCs = VCC Max.,

tCYCLE =10 MHz

—

CE1s = VIL, CE2s = VIH tCYCLE = 1 MHz

—

ICC2s

SRAM VCC Active

Current

CE1s = 0.2 V,

CE2s = VCCs – 0.2 V,

WE = VCCs – 0.2 V

tCYCLE = 10 MHz —

tCYCLE = 1 MHz

—

ISB1f

Flash VCC Standby

Current

VCCf = VCC Max., CEf = VCCf ± 0.3 V

RESET = VCCf ± 0.3 V

—

ISB2f

Flash VCC Standby

Current (RESET)

VCCf = VCC Max., RESET = VSS ± 0.3 V

—

ISB1s

SRAM VCC Standby

Current

CE1s = VIH or CE2s = VIL

—

VCCs TA = 25°C

—

= 3.0

V

TA = –20 to

±10% +85°C

—

VCCs TA = 25°C

—

= 3.3

ISB2s**

SRAM VCC Standby

Current

CE1s = VCC –0.2

V or CE2s = 0.2 V

V

±0.3

V

TA = –20 to

+85°C

—

TA = 25°C

—

VCCs TA = –20 to

= 3.0 +40°C

—

V

TA = –20 to

+85°C

—

VIL Input Low Level

—

–0.3

VIH Input High Level

—

2.2

VOL

Output Low Voltage

Level

IOL = 2.1 mA,

VCCf = VCCs = VCC Min.

—

VOH

Output High Voltage

Level

IOH = –500 µA,

VCCf = VCCs = VCC Min.

VCC – 0.5

VLKO

Flash Low VCC Lock-Out

Voltage

—

2.3

Typ.

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

1

—

1.5

—

1

—

—

—

—

—

—

—

Max. Unit

+1.0 µA

+1.0 µA

18

20

mA

8

10

35 mA

45

mA

45

45

mA

45

35 mA

40 mA

12 mA

35 mA

6 mA

5 µA

5 µA

2 mA

2.5 µA

55 µA

3 µA

60 µA

2 µA

5 µA

50 µA

0.6 V

VCC+0.3* V

0.4 V

—V

2.5 V

* : VCC indicate lower of VCCf or VCCs

** :During standby mode with CE1s = VCCS – 0.2 V, CE2s should be CE2s < 0.2V or CE2s > VCCS – 0.2V

*** :Embeded Algorithm (program or erase) is in progress. (@5 MHz)

11

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