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MB89537 View Datasheet(PDF) - Fujitsu

Part Name
Description
Manufacturer
MB89537 Datasheet PDF : 65 Pages
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MB89530 Series
s PROGRAMMING AND ERASING FLASH MEMORY ON THE MB89F538L
1. Flash Memory
The flash memory is located between 4000H and FFFFH in the CPU memory map and incorporates a flash
memory interface circuit that allows read access and program access from the CPU to be performed in the same
way as mask ROM. Programming and erasing flash memory is also performed via the flash memory interface
circuit by executing instructions in the CPU. This enables the flash memory to be updated in place under the
control of the CPU, providing an efficient method of updating program and data.
2. Flash Memory Features
• 48 K byte×8-bit configuration : (16 K+8 K+8 K+16 K sectors)
• Automatic programming algorithm (Embedded algorithm* : Equivalent to MBM29LV200)
• Includes an erase pause and restart function
• Data polling and toggle bit for detection of program/erase completion
• Detection of program/erase completion via CPU interrupt
• Compatible with JEDEC-standard commands
• Sector Erasing (sectors can be combined in any combination)
• No. of program/erase cycles : 10,000 (Min)
* : Embedded Algorithm is a trademark of Advanced Micro Devices.
3. Procedure for Programming and Erasing Flash Memory
Programming and reading flash memory cannot be performed at the same time. Accordingly, to program or
erase flash memory, the program must first be copied from flash memory to RAM so that programming can be
performed without program access from flash memory.
4. Flash Memory Register
• Control status register (FMCS)
Address
007AH
bit7 bit6 bit5
INTE RDYINT WE
R/W R/W R/W
bit4 bit3 bit2 bit1 bit0
RDY
Re- Re-
served served
Re-
served
R
R/W R/W
R/W
Initial value
000X00-0B
20

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