MBM29F016A-90PFNT View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

MBM29F016A-90PFNT

FLASH MEMORY CMOS 16M (2M × 8) BIT

Fujitsu 

FUJITSU SEMICONDUCTOR

DATA SHEET

FLASH MEMORY

CMOS

16M (2M × 8) BIT

DS05-20844-4E

MBM29F016A-70/-90/-12

s FEATURES

• Single 5.0 V read, write, and erase

Minimizes system level power requirements

• Compatible with JEDEC-standard commands

Pinout and software compatible with single-power supply Flash

Superior inadvertent write protection

• 48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type)

• Minimum 100,000 write/erase cycles

• High performance

70 ns maximum access time

• Sector erase architecture

Uniform sectors of 64 K bytes each

Any combination of sectors can be erased. Also supports full chip erase.

• Embedded Erase™ Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded Program™ Algorithms

Automatically programs and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Low VCC write inhibit ≤ 3.2 V

• Hardware RESET pin

Resets internal state machine to the read mode

• Erase Suspend/Resume

Supports reading or programming data to a sector not being erased

• Sector group protection

Hardware method that disables any combination of sector groups from write or erase operation (a sector group

consists of 4 adjacent sectors of 64 K bytes each)

• Temporary sector groups unprotection

Temporary sector unprotection via the RESET pin

Embedded Erase™, Embedded Program™ and ExpressFlash™ are trademarks of Advanced Micro Devices, Inc.

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