VS-MBR1100 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
VS-MBR1100 Datasheet PDF : 6 Pages
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www.vishay.com
VS-MBR1100, VS-MBR1100-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
1A
TJ = 25 °C
2A
1A
TJ = 125 °C
2A
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.85
0.96
0.68
0.78
0.5
1.0
35
8.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
RthJL (2)
DC operation
See fig. 4
TEST CONDITIONS
Approximate weight
Marking device
Case style DO-204AL (DO-41) (JEDEC)
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
VALUES
- 40 to 150
UNITS
°C
80
°C/W
0.33
g
0.012
oz.
MBR1100
Revision: 21-Sep-11
2
Document Number: 93438
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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