VS-MBR1100 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
VS-MBR1100 Datasheet PDF : 6 Pages
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www.vishay.com
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.1
0
0.4
0.8
1.2
1.6
93438_01
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
1 TJ = 150 °C
0.1
TJ = 125 °C
0.01
0.001
0.0001
TJ = 25 °C
0
0
20
40
60
80
100
93438_02
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
VS-MBR1100, VS-MBR1100-M3
Vishay Semiconductors
160
140
120
DC
100
80
60 Square wave (D = 0.50)
80 % Rated VR applied
40
20 see note (1)
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
93438_04
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
1
0.8
0.6
RMS Limit
0.4
0.2
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DDCC
0
0
0.5
1
1.5
93438_05
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
1000
TJ = 25 °C
100
At Any Rated Load Condition
And With rated VRRM Applied
Following Surge
10
0
20
40
60
80
100
10
10
100
1000
10 000
93438_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
93438_06
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 21-Sep-11
3
Document Number: 93438
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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