MBR16100CT View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

MBR16100CT

SWITCHMODE Power Rectifier

ON Semiconductor 

MBR16100CT

MAXIMUM RATINGS (Per Diode Leg)

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

(TC = 166°C) Per Diode

Per Device

VRRM

VRWM

VR

IF(AV)

100

V

A

8.0

16

Peak Repetitive Forward Current

(Square Wave, 20 kHz)

TC = 165°C

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFRM

IFSM

16

A

150

A

Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)

IRRM

0.5

A

Operating Junction Temperature (Note 1)

TJ

*65 to +175

°C

Storage Temperature

Tstg

*65 to +175

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Characteristic

Maximum Thermal Resistance, Junction−to−Case (Min. Pad)

Junction−to−Ambient (Min. Pad)

Symbol

RqJC

RqJA

Value

2.0

60

Unit

°C/W

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

Characteristic

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 8.0 A, TJ = 125°C)

(iF = 8.0 A, TJ = 25°C)

(iF = 16 A, TJ = 125°C)

(iF = 16 A, TJ = 25°C)

Maximum Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, TJ = 125°C)

(Rated dc Voltage, TJ = 25°C)

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.

Symbol

vF

iR

Min Typical Max Unit

V

−

0.56 0.60

−

0.68 0.74

−

0.67 0.69

−

0.79 0.84

mA

−

0.95 5.0

− 0.0013 0.1

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